Investigation on dispersive optical constants and electrical properties of CuIn5S8 thin films
Identifieur interne : 000987 ( Main/Repository ); précédent : 000986; suivant : 000988Investigation on dispersive optical constants and electrical properties of CuIn5S8 thin films
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Abstract
CuIn5S8 thin films were prepared by thermal evaporation under vacuum onto heated and no heated glass substrates. These films were characterized for their structural, optical and electrical properties by using X-ray diffraction (XRD), optical measurement and Hall-effect measurements. X-ray diffraction analysis of the deposited films revealed that the film deposited without heating the substrate was amorphous in nature and an amorphous-to-crystalline phase transition with could be obtained by heating the substrates above 100 C. The optical constants of the deposited films were determined, in the spectral range 300-1800 nm, from the analysis of the transmission and reflection data. The energy bandgap values changed from 2.17 to 1.77 depending on the substrate temperature. The refractive index dispersion and extinction coefficient in the low absorption region are adequately described by the Wemple-Di Domenico single oscillator model. The values of the oscillator energy Eo, dispersion energy Ed, the high-frequency dielectric constant ε∞ and the ratio of the carrier concentration to the effective mass were estimated according to the models of Wemple-Di Domenico and Spitzer-Fan. The resistivity values of the films increased from 0.826 to 1.495 x 106 Ω cm and a transition from p-type conductivity to a highly compensated state is observed by increasing the substrate temperature.
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Kanzari</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs - ENIT, Université Tunis ElManar, BP 37</s1><s2>Le belvédère 1002 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>Le belvédère 1002 Tunis</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0175147</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0175147 INIST</idno><idno type="RBID">Pascal:13-0175147</idno><idno type="wicri:Area/Main/Corpus">000E31</idno><idno type="wicri:Area/Main/Repository">000987</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1098</idno><title level="j" type="abbreviated">Solid state commun.</title><title level="j" type="main">Solid state communications</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper Indium Sulfides Mixed</term><term>Crystallization</term><term>Electrical conductivity transitions</term><term>Extinction index</term><term>Hall effect</term><term>Optical constants</term><term>Refractive index</term><term>Substrat temperature</term><term>Thin films</term><term>Vacuum evaporation</term><term>XRD</term><term>p type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Constante optique</term><term>Cristallisation</term><term>Evaporation sous vide</term><term>Transition conductivité électrique</term><term>Diffraction RX</term><term>Effet Hall</term><term>Température substrat</term><term>Indice réfraction</term><term>Indice extinction</term><term>Cuivre Indium Sulfure Mixte</term><term>Couche mince</term><term>Semiconducteur type p</term><term>CuIn5S8</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuIn<sub>5</sub>S<sub>8</sub> thin films were prepared by thermal evaporation under vacuum onto heated and no heated glass substrates. These films were characterized for their structural, optical and electrical properties by using X-ray diffraction (XRD), optical measurement and Hall-effect measurements. X-ray diffraction analysis of the deposited films revealed that the film deposited without heating the substrate was amorphous in nature and an amorphous-to-crystalline phase transition with could be obtained by heating the substrates above 100 C. The optical constants of the deposited films were determined, in the spectral range 300-1800 nm, from the analysis of the transmission and reflection data. The energy bandgap values changed from 2.17 to 1.77 depending on the substrate temperature. The refractive index dispersion and extinction coefficient in the low absorption region are adequately described by the Wemple-Di Domenico single oscillator model. The values of the oscillator energy E<sub>o</sub>, dispersion energy E<sub>d</sub>, the high-frequency dielectric constant ε∞ and the ratio of the carrier concentration to the effective mass were estimated according to the models of Wemple-Di Domenico and Spitzer-Fan. The resistivity values of the films increased from 0.826 to 1.495 x 10<sup>6</sup> Ω cm and a transition from p-type conductivity to a highly compensated state is observed by increasing the substrate temperature.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1098</s0></fA01><fA02 i1="01"><s0>SSCOA4</s0></fA02><fA03 i2="1"><s0>Solid state commun.</s0></fA03><fA05><s2>160</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Investigation on dispersive optical constants and electrical properties of CuIn<sub>5</sub>S<sub>8</sub> thin films</s1></fA08><fA11 i1="01" i2="1"><s1>KHEMIRI (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>KANZARI (M.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs - ENIT, Université Tunis ElManar, BP 37</s1><s2>Le belvédère 1002 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>32-36</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10917</s2><s5>354000173352910080</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0175147</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid state communications</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>CuIn<sub>5</sub>S<sub>8</sub> thin films were prepared by thermal evaporation under vacuum onto heated and no heated glass substrates. These films were characterized for their structural, optical and electrical properties by using X-ray diffraction (XRD), optical measurement and Hall-effect measurements. X-ray diffraction analysis of the deposited films revealed that the film deposited without heating the substrate was amorphous in nature and an amorphous-to-crystalline phase transition with could be obtained by heating the substrates above 100 C. The optical constants of the deposited films were determined, in the spectral range 300-1800 nm, from the analysis of the transmission and reflection data. The energy bandgap values changed from 2.17 to 1.77 depending on the substrate temperature. The refractive index dispersion and extinction coefficient in the low absorption region are adequately described by the Wemple-Di Domenico single oscillator model. The values of the oscillator energy E<sub>o</sub>, dispersion energy E<sub>d</sub>, the high-frequency dielectric constant ε∞ and the ratio of the carrier concentration to the effective mass were estimated according to the models of Wemple-Di Domenico and Spitzer-Fan. The resistivity values of the films increased from 0.826 to 1.495 x 10<sup>6</sup> Ω cm and a transition from p-type conductivity to a highly compensated state is observed by increasing the substrate temperature.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C50D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Constante optique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical constants</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cristallisation</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Crystallization</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Evaporation sous vide</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Vacuum evaporation</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Transition conductivité électrique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Electrical conductivity transitions</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>XRD</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet Hall</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Hall effect</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Température substrat</s0><s5>12</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Substrat temperature</s0><s5>12</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Temperatura substrato</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>13</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Refractive index</s0><s5>13</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indice extinction</s0><s5>14</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Extinction index</s0><s5>14</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Cuivre Indium Sulfure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Copper Indium Sulfides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche mince</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Thin films</s0><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur type p</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>p type semiconductor</s0><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>CuIn5S8</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>154</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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